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mrf7s21170hr3 mrf7s21170hsr3 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for cdma and multicarrier amplifier applications. to be used in class ab and class c for pcn--pcs/cellular radio and wll applications. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 50 watts avg., f = 2167.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 16 db drain efficiency ? 31% device output signal par ? 6. 1 db @ 0.01% probability on ccdf acpr @ 5 mhz offset ? --37 dbc in 3.84 mhz channel bandwidth ? capable of handling 5:1 vswr, @ 32 vdc, 2140 mhz, 170 watts cw output power ? p out @ 1 db compression point ? 170 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 ? c case operating temperature t c 150 ? c operating junction temperature (1,2) t j 225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 170 w cw case temperature 73 ? c, 25 w cw r ? jc 0.31 0.36 ? c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf7s21170h rev. 7, 2/2012 freescale semiconductor technical data mrf7s21170hr3 mrf7s21170hsr3 2110--2170 mhz, 50 w avg., 28 v single w--cdma lateral n--channel rf power mosfets case 465c--03 ni--880s mrf7s21170hsr3 case 465b--04 ni--880 mrf7s21170hr3 ? freescale semiconductor, inc., 2006--2008, 2011--2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 500 nadc on characteristics gate threshold voltage (v ds =10vdc,i d = 372 ? adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i d = 1400 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (1) (v dd =28vdc,i d = 1400 madc, measured in functional test) v gg(q) 4.5 5.4 6.5 vdc drain--source on--voltage (v gs =10vdc,i d =3.72adc) v ds(on) 0.1 0.15 0.3 vdc dynamic characteristics (2) reverse transfer capacitance (v ds =28vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.9 ? pf output capacitance (v ds =28vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 703 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 50 w avg., f = 2167.5 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 15 16 18 db drain efficiency ? d 29 31 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.7 6.1 ? db adjacent channel power ratio acpr ? -- 3 7 -- 3 5 dbc input return loss irl ? -- 1 5 -- 9 db 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. (continued)
mrf7s21170hr3 mrf7s21170hsr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 2110--2170 mhz bandwidth video bandwidth @ 170 w pep p out whereim3=--30dbc (tone spacing from 100 khz to vbw) ? imd3 = imd3 @ vbw frequency -- imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 25 ? mhz gain flatness in 60 mhz bandwidth @ p out =50wavg. g f ? 0.4 ? db average deviation from linear phase in 60 mhz bandwidth @p out = 170 w cw ? ? 1.95 ? ? average group delay @ p out = 170 w cw, f = 2140 mhz delay ? 1.7 ? ns part--to--part insertion phase variation @ p out = 170 w cw f = 2140 mhz, six sigma window ?? ? 18 ? ? gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.015 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.01 ? db/ ? c 1. v gg =2xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output.
4 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3 figure 1. mrf7s21170hr3(hsr3) test circuit schematic z11 0.060 ? x 0.760 ? microstrip z12* 0.129 ? x 0.083 ? microstrip z13* 0.436 ? x 0.083 ? microstrip z14* 0.490 ? x 0.083 ? microstrip z15* 0.275 ? x 0.083 ? microstrip z16 0.230 ? x 0.083 ? microstrip z17, z18 0.900 ? x 0.080 ? microstrip pcb taconic tlx8--0300, 0.030 ? , ? r =2.55 * variable for tuning z1 0.250 ? x 0.083 ? microstrip z2* 0.090 ? x 0.083 ? microstrip z3* 0.842 ? x 0.083 ? microstrip z4* 0.379 ? x 0.083 ? microstrip z5* 0.307 ? x 0.083 ? microstrip z6 0.156 ? x 0.787 ? microstrip z7 1.160 ? x 0.080 ? microstrip z8 0.119 ? x 0.787 ? microstrip z9 0.077 ? x 0.880 ? microstrip z10 0.459 ? x 1.000 ? microstrip v bias v supply rf output rf input dut c1 c2 r1 z1 z2 z3 z4 c3 z10 z5 r2 z7 r3 z8 z11 z12 z13 z14 z15 c5 c6 z6 z16 c18 c17 c16 c15 c14 c4 z9 z17 c8 c10 c12 c13 z18 c7 c9 c11 + table 5. mrf7s21170hr3(hsr3) test circuit component designations and values part description part number manufacturer c1 100 pf chip capacitor atc100b101jt500xt atc c2, c3, c7, c8, c17, c18 6.8 pf chip capacitors atc100b6r8bt500xt atc c4, c15 0.3 pf chip capacitors atc100b0r3bt500xt atc c5 0.8 pf chip capacitor atc100b0r8bt500xt atc c6 0.2 pf chip capacitor atc100b0r2bt500xt atc c9, c10, c11, c12 10 ? f chip capacitors c5750x5r1h106mt tdk c13 470 ? f, 63 v electrolytic capacitor, radial 477kxm063m illinois capacitor c14 0.4 pf chip capacitor atc100b0r4bt500xt atc c16 0.1 pf chip capacitor atc100b0r1bt500xt atc r1, r2 10 k ? , 1/4 w chip resistors crcw12061002fkea vishay r3 10 ? , 1/4 w chip resistor crcw120610r0fkea vishay
mrf7s21170hr3 mrf7s21170hsr3 5 rf device data freescale semiconductor, inc. figure 2. mrf7s21170hr3(hsr3) test circuit component layout mrf7s21170h rev 0 cut out area c13 r2 r1 c1 c2 r3 c4 c3 c5 c6 c7 c9 c11 c14 c15 c16 c18 c17 c10 c12 c8
6 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3 typical characteristics g ps , power gain (db) 2220 2060 irl g ps parc f, frequency (mhz) figure 3. output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. v dd =28vdc,p out =50w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y( ccdf) 2160 2120 2100 9 17 16 15 14 13 12 11 10 -- 3 36 34 32 30 28 0 -- 1 -- 2 ? d irl, input return loss (db) parc (db) -- 2 5 -- 5 -- 1 0 -- 1 5 -- 2 0 ? d , drain efficiency (%) 2140 2080 22002180 g ps , power gain (db) 2220 2060 irl g ps parc f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 84 watts avg. 2160 2120 2100 9 17 16 15 14 13 12 11 10 -- 5 44 42 40 38 36 -- 2 -- 3 -- 4 ? d irl, input return loss (db) parc (db) -- 2 5 -- 5 -- 1 0 -- 1 5 -- 2 0 ? d , drain efficiency (%) 2140 2080 22002180 figure 5. two--tone power gain versus output power 100 13 18 1 p out , output power (watts) pep v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing 16 15 14 10 400 g ps , power gain (db) 17 figure 6. third order intermodulation distortion versus output power -- 1 0 p out , output power (watts) pep 10 -- 2 0 -- 3 0 -- 4 0 100 -- 6 0 -- 5 0 v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing 1 intermodulation d istortion (dbc) imd, third order 400 i dq = 2100 ma 1750 ma 700 ma 1050 ma 1400 ma i dq = 700 ma 1750 ma 1050 ma 1400 ma 2100 ma v dd =28vdc,p out =84w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probab ility ( ccdf)
mrf7s21170hr3 mrf7s21170hsr3 7 rf device data freescale semiconductor, inc. typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulatio n distortion (dbc) -- 6 0 -- 1 0 1 100 -- 4 0 -- 5 0 10 -- 3 0 -- 2 0 7th order 5th order 3rd order figure 8. intermodulation distortion products versus tone spacing two--tone spacing (mhz) figure 9. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 40 actual ideal 0 -- 2 -- 4 output compression at the 0.01% probability on the ccdf (db) 10 v dd =28vdc,p out = 170 w (pep), i dq = 1400 ma two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im3--u -- 1 0 -- 2 0 -- 4 0 1 100 imd, intermodulatio n distortion (dbc) 20 60 400 v dd =28vdc,i dq = 1400 ma f1 = 2135 mhz, f2 = 2145 mhz two--tone measurements, 10 mhz tone spacing -- 5 0 -- 3 0 im3--l im5--u im5--l im7--l im7--u 80 120 18 54 48 42 36 30 24 ? d ? drain efficiency (%) v dd =28vdc,i dq = 1400 ma f = 2140 mhz, input signal par = 7.5 db --1 db = 43.335 w 0 --2 db = 61.884 w --3 db = 83.111 w 100 figure 10. digital predistortion correction versus acpr and output power p out , output power (dbm) 50 -- 7 0 -- 2 0 40 4241 -- 3 0 -- 4 0 -- 5 0 -- 6 0 acpr, upper and lower results (dbc) 43 44 45 46 47 uncorrected, upper and lower dpd corrected no memory correction dpd corrected, with memory correction 400 13 19 0 60 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd =28vdc i dq = 1400 ma f = 2140 mhz t c =--30 _ c 25_ c 85_ c 10 1 18 17 16 15 14 50 40 30 20 10 ? d ? drain efficiency (%) g ps ? d g ps , power gain (db) 100 -- 3 0 _ c 25_ c 85_ c 48 49 -- 6 0 v dd =28vdc,i dq = 1400 ma, f = 2140 mhz single--carrier w--cdma, input signal par = 7.5 db, acpr @ ? 5mhz offset in 3.84 mhz integrated bandwidth
8 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3 typical characteristics figure 12. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 200 13 17 0 100 14 15 16 28 v i dq = 1400 ma f = 2140 mhz 280 v dd =24v 32 v w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 13. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8-- 3 . 6-- 5 . 4 -- 9 9 f, frequency (mhz) figure 14. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
mrf7s21170hr3 mrf7s21170hsr3 9 rf device data freescale semiconductor, inc. z o =10 ? z load z source f = 2060 mhz f = 2220 mhz f = 2220 mhz f = 2060 mhz v dd =28vdc,i dq = 1400 ma, p out =50wavg. f mhz z source ? z load ? 2060 4.57 -- j10.70 1.02 -- j3.54 2080 4.57 -- j10.38 0.99 -- j3.34 2100 4.57 -- j10.06 0.96 -- j3.14 2120 4.52 -- j9.72 0.93 -- j2.94 2140 4.40 -- j9.42 0.92 -- j2.76 2160 4.15 -- j9.12 0.91 -- j2.59 2180 4.44 -- j8.82 0.89 -- j2.42 2200 4.19 -- j8.53 0.88 -- j2.25 2220 4.12 -- j8.23 0.88 -- j2.09 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3 alternative peak tune load pull characteristics 36 p3db = 53.56 dbm (226 w) p in , input power (dbm) v dd =28vdc,i dq = 1400 m, pulsed cw 12 ? sec(on), 10% duty cycle, f = 2140 mhz 56 54 52 37 3938 41 40 44 42 actual ideal p1db = 52.75 dbm (188 w) 57 55 51 43 p out , output power (dbm) p6db = 53.89 dbm (244 w) note: measured in a peak tuned load pull fixture 53 58 59 60 61 35343332 test impedances per compression level z source ? z load ? p3db 4.43 -- j11.85 0.81 -- j2.87 figure 16. pulsed cw output power versus input power @ 28 v 36 p3db = 54.65 dbm (290 w) p in , input power (dbm) v dd =32vdc,i dq = 1400 ma, pulsed cw 12 ? sec(on), 10% duty cycle, f = 2140 mhz 56 54 52 37 3938 4140 44 42 actual ideal p1db = 53.54 dbm (226 w) 57 55 43 p out , output power (dbm) p6db = 54.88 dbm (307 w) note: measured in a peak tuned load pull fixture 53 58 59 60 61 62 353433 45 test impedances per compression level z source ? z load ? p3db 4.43 -- j11.85 0.72 -- j2.87 figure 17. pulsed cw output power versus input power @ 32 v
mrf7s21170hr3 mrf7s21170hsr3 11 rf device data freescale semiconductor, inc. package dimensions
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mrf7s21170hr3 mrf7s21170hsr3 13 rf device data freescale semiconductor, inc.
14 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3
mrf7s21170hr3 mrf7s21170hsr3 15 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 may 2006 ? initial release of data sheet 1 june 2006 ? added class c to description of parts, pg. 1 ? changeded ? ? ? to ?--? in the device output signal par bullet, pg. 1 ? changed typ value from ? 9 to 18 in part--to--part phase variation char acteristic description in table 4, typical performances, p. 2 ? expanded the characterization range in the mttf factor graph from 200 _ c to 230 _ c, fig. 12, p. 7 2 aug. 2006 ? added greater negative source bullet to features section, p. 1 ? corrected fig. 14, single--carrier w--cdma spectrum, to 3.84 mhz, p. 7 3 sept. 2006 ? changed ?capable of handling? bullet from 10:1 vswr @ 28 vdc to 5:1 vswr @ 32 vdc, pg. 1 ? added ?insertion? to part--to--part phase variation charac teristic description in table 4, typical performances, p. 2 ? added gain flatness, group delay and deviation fro m linear phase characteristics to table 4, typical performances, p. 2 ? corrected z6 value from ?0.119? to ?0.156?, corrected z8 value from ?0.156? to ?0.119?, corrected z9 value from ?0.770? to ?0.077?, corrected z11 value from ?0 .076? to ?0.760?, fig. 1, test circuit schematic, p. 3 ? added part number and manufacturer for r1, r2 and r3 in table 5, test circuit component designations and values, p. 3 ? added figure 10, digital predi stortion correction, p. 6 ? corrected fig. 15, single--carrier w--cdma spectrum, t o correctly reflect integrated bandwidth offsets, p. 7 ? added figure 17, pulsed cw output power versus input power @ 28 vdc, p. 9 ? added figure 18, pulsed cw output power versus input power @ 32 vdc, p. 9 4 may 2007 ? removed ?designed for digital predistortion error co rrection systems? bullet as functionality is standard, p. 1 ? added ?optimized for doherty applicati ons? bullet to features section, p. 1 ? operating junction temperature increased from 200 ? c to 225 ? c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? removed footnote and ?measured in functional test ? from the rf test condition voltage callout for v gs(q) , and added fixture gate quiescent voltage, v gg(q) to on characteristics table, p. 2 ? updated verbiage in typical performances table, p. 3 ? updated part numbers in table 5, component designations and values, to rohs compliant part numbers and updated obsoleted atc600 series capacitors to atc100 series, p. 4 ? adjusted scale for fig. 8, intermodulation distortio n products versus tone spac ing, to show wider dynamic range, p. 7 ? replaced fig. 13, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 8 ? fig. 14, ccdf w--cdma 3gpp, test model 1, 64 dpch, 50% clipping, single--ca rrier test signal, updated to include output power level at functional test, p. 8 (continued)
16 rf device data freescale semiconductor, inc. mrf7s21170hr3 mrf7s21170hsr3 revision history (continued) revision date description 5 apr. 2008 ? corrected on characteristics table i d value for v gs(th) from 270 ? adc to 372 ? adc and v ds(on) from 2.7 adc to 3.72 adc; tightened v gs(th) minimum and maximum val ues to match production test values, p. 2 ? updated part numbers in table 5, component designati ons and values, to latest rohs compliant part numbers, p. 4 ? updated fig. 14, ccdf w--cdma 3gpp, test model 1, 64 dpch, 50% clipping, single--carrier test signal, to better represent production test signal, p. 8 6 mar. 2011 ? modified data sheet to reflect rf test reduction described in product and proc ess change notification number, pcn13628, p. 1, 2 ? fig. 13, mttf versus junction temperature removed, p. 8. refer to the device?s mttf calculator available at freescale.com/rfpower. g o to design resources > software and tools. ? fig. 14, ccdf w--cdma iq magnitude c lipping, single--carrier test signal and fig. 15, single--carrier w--cdma spectrum updated to show the undistorted i nput test signal, p. 8 (renumbered as figs. 13 and 14 respectively after fig. 13 removed) ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 15 7 feb. 2012 ? table 3, esd protection characteristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2. ? replaced case outline 465b--03, issue d, with 465b--04, issue f, p. 1, 11--12. deleted style 1 pin note on sheet 2. on sheet 2, changed dimension b in mm from 13. 6--13.8 to 13.59--13.84, changed dimension h in mm from 1.45--1.7 to 1.45--1.70, changed dimension k in mm from 4.44--5.21 to 4.45--5.21, changed dimension m in mm from 22.15--22.55 to 22.15--22.56, changed dimension n in mm from 19.3--22.6 to 22.12--22.58, changed dimension q in mm from 3--3.51 to 3.00--3.51, changed dimension r and s in mm from 13.1--13.3 to 13.08--13.34. ? replaced case outline 465c--02, issue d, with 465c--03, issue e, p. 1, 13--14. deleted style 1 pin note on sheet 2. on sheet 2, changed dimension b in mm from 13. 6--13.8 to 13.59--13.84, changed dimension h in mm from 1.45--1.7 to 1.45--1.70, changed dimension m in mm from 22.15--22.55 to 22.15--22.56, changed dimension n in mm from 19.3--22.6 to 22.12--22.58, changed dimension r and s in mm from 13.1--13.3 to 13.08--13.34.
mrf7s21170hr3 mrf7s21170hsr3 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006--2008, 2011--2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s21170h rev. 7, 2/2012

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